We demonstrate the electronic trap energy distribution ( $\Delta {E}_{IL}$ ) in the wide bandgap, nonconventional aluminum oxide phosphate (ALPO) dielectrics. The trap energy distribution has been measured by using the gate injection high-speed capacitance–voltage measurement technique and verified through conventional deep-level transient spectroscopy. The electronic trap energies in ALPO dielectrics were found to be influenced and, hence, tunable by the irradiation temperature. The nonirradiated dielectric film (NI-ALPO) displayed the maximum number of electronic traps at an energy level of 0.2 eV below the conduction band of silicon (Si-E _CB ). On the other hand, the dielectric film irradiated at 200 °C confirmed the highest number of traps at the location of 0 eV and at the same energy level of Si-E _CB . In addition, the NI-ALPO dielectric contained over 90% of traps in the deep level of the bandgap (below Si-E _CB ). In contrast, the ALPO film irradiated at 200 °C accommodated a limited number of traps (~75%) at the deep level of the bandgap.

中文翻译：

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溶胶-凝胶工艺介电材料中的可调电子陷阱能量

我们演示了电子陷阱的能量分布（ $ \ Delta {E} _ {IL} $ ）在非常规的宽带隙磷酸铝（ALPO）电介质中。陷阱能量分布已通过使用栅极注入高速电容-电压测量技术进行了测量，并通过常规的深层瞬态光谱法进行了验证。发现ALPO电介质中的电子陷阱能受到影响，因此可以受辐照温度调节。未辐射的介电膜（NI-ALPO）在低于硅（Si-E _CB ）的导带的能级为0.2 eV时显示出最大数量的电子陷阱 。另一方面，在200°C辐照的介电膜中，在0 eV的位置和相同的Si-E _CB能级下，陷阱数量最多 。此外，NI-ALPO电介质在带隙深层（低于Si-E _CB ）中包含超过90％的陷阱 。相比之下，在200°C辐照的ALPO薄膜在带隙深处仅能容纳有限数量的陷阱（约75％）。