To understand the electrical switching behavior of Si ₁₅ Te $_{85-{x}}$ Cu _x ( $1\le {x} \le10$ ) series, ${I}$ – ${V}$ characterization has been performed on bulk as well as amorphous thin films of the as-prepared samples. Both the bulk glasses and amorphous thin films are found to manifest memory-type switching behavior. The threshold voltages of thin-film devices are found to be much lower than the bulk counterparts and hence could find application for phase change memory (PCM). The composition analyses of both have divulged the existence of intermediate phase (IP) in the composition range of $2 \le {x} \le6$ . To examine the probability of the given glass for PCM application, Set–Reset studies have been performed on the glasses with a triangular pulse of 6 mA for set operation and rectangular pulse of 12 mA for the reset operation. The study has revealed a continuous repetition of few Set–Reset cycle by the Si–Te–Cu series. Raman studies carried out on the bulk glasses report the occurrence of blue shift over the composition in a regular manner. Further, SEM studies have been carried out on Si–Te–Cu samples to understand the morphological changes that would have occurred during switching. Additionally, thickness dependence of threshold voltage of representative Si ₁₅ Te ₈₀ Cu ₅ and Si ₁₅ Te ₇₆ Cu ₉ glasses has been carried out to reveal the relationship between threshold voltage and thickness.

中文翻译：

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铜掺杂对基于Si-Te的硫族化物玻璃和薄膜的影响：电开关，形态学和拉曼研究

了解Si ₁₅ Te 的电气开关行为 $ _ {85- {x}} $ 铜 _X （ $ 1 \ le {x} \ le10 $ ） 系列， $ {I} $ – $ {V} $ 已经对所制备样品的块状和无定形薄膜进行了表征。发现大块玻璃和无定形薄膜都表现出记忆型开关行为。薄膜器件的阈值电压远低于整体器件的阈值电压，因此可以找到相变存储器（PCM）的应用。两者的成分分析都揭示了中间相（IP）的存在范围在 $ 2 \ le {x} \ le6 $ 。为了检查给定玻璃用于PCM的可能性，已经对玻璃进行了置位-重置研究，设置操作的三角脉冲为6 mA，重置操作的矩形脉冲为12 mA。研究表明，Si-Te-Cu系列连续重复很少的置位-复位周期。在大块玻璃上进行的拉曼研究报告了在组成上有规律地发生蓝移的现象。此外，已经对Si-Te-Cu样品进行了SEM研究，以了解在转换过程中会发生的形态变化。另外，代表性的Si ₁₅ Te ₈₀ Cu ₅和Si ₁₅ Te ₇₆ Cu ₉的阈值电压的厚度依赖性。 进行了玻璃实验以揭示阈值电压与厚度之间的关系。