A two-valley formulation of 1-D drift-diffusion transport is presented that takes the coupling between the valleys into account via a new approximation for the nonlocal electric field. The proposed formulation is suitable for the simulation of III–V heterojunction bipolar transistors as opposed to formulations that employ the single electron gas approximation with a modified velocity-field model, which also causes convergence problems. Based on Boltzmann transport equation simulations, model parameters of the proposed two-valley formulation are given for GaAs, InP, InAs, and GaSb at room temperature. Applications of the new formulation are also demonstrated.

中文翻译：

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两谷半导体器件的一维漂移扩散模拟

提出了一维漂移-扩散输运的两谷公式，该公式通过对非局部电场的新近似将谷之间的耦合考虑在内。与采用单电子气体逼近法和改进的速度场模型的公式相反，所提出的公式适合于III–V异质结双极晶体管的仿真，这也会引起收敛问题。基于玻尔兹曼输运方程的模拟，给出了室温下GaAs，InP，InAs和GaSb的两谷公式的模型参数。还演示了新配方的应用。