This article introduces an on-chip anomaly monitoring system design approach that is based on thermal profiling and side-channel analysis. The strategy aims at the realization of nonintrusive hardware Trojan (HT) detection over the lifetime of the circuit under test (CUT). To evaluate the capability of the proposed HT detection system, the on-chip electrothermal coupling is modeled as part of the simulation technique, which associates local thermal activities with circuit-level power consumption using a standard electrical simulator. To monitor the thermal profiles on chips with high sensitivity to local temperature changes and the resilience to flicker noise, the sensor architecture described in this article is the first differential temperature sensor equipped with a chopping mechanism. A methodology is described to utilize principal component analysis (PCA) to extract critical information from the quantized output of the system for effective HT detection in the presence of noise. The complete sensor signal path of the system was designed and simulated with foundry-supplied device models (130-nm CMOS technology), and the impact due to process variations have been considered via Monte Carlo simulations. The results indicate that small Trojans with approximately $2~\mu \text{W}$ of power can be detected within the thermal profile of a CUT consuming more than $500~\mu \text{W}$ . As the first step to prove the feasibility of on-chip quantization in the HT detection system, a prototype 8-bit successive approximation register (SAR) analog-to-digital converter (ADC) was fabricated with 130-nm CMOS technology.

中文翻译：

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片上热分析以检测恶意活动：系统级概念和关键构件的设计

本文介绍了一种基于热分析和边通道分析的片上异常监视系统设计方法。该策略旨在在被测电路（CUT）的整个生命周期内实现非侵入式硬件特洛伊木马（HT）检测。为了评估所提出的HT检测系统的能力，将片上电热耦合建模为仿真技术的一部分，该仿真技术使用标准的电仿真器将局部热活动与电路级功耗相关联。为了监控对局部温度变化具有高灵敏度和对闪烁噪声的适应能力的芯片上的温度曲线，本文介绍的传感器架构是首款配备斩波机制的差分温度传感器。描述了一种方法，该方法利用主成分分析（PCA）从系统的量化输出中提取关键信息，以便在存在噪声的情况下进行有效的HT检测。使用铸造厂提供的设备模型（130纳米CMOS技术）设计和仿真了系统的完整传感器信号路径，并已通过蒙特卡洛模拟考虑了工艺变化带来的影响。结果表明，小型木马与 $ 2〜\ mu \ text {W} $ 可以在CUT的热量分布图中检测到的功率消耗超过 $ 500〜\ mu \ text {W} $ 。作为证明在HT检测系统中进行片上量化的可行性的第一步，采用130 nm CMOS技术制造了原型8位逐次逼近寄存器（SAR）模数转换器（ADC）。