Ceramic particles, such as titanium oxide and indium tin oxide, are expected to be used as electric or catalytic materials for various applications. In this work, we progressed to employ the irradiation with an electron beam as the nonequilibrium reaction field for ceramic composition, and we successfully obtained the basic technology for a ceramic thin-film fabrication using a field emission (FE) electron beam with low energy resolution having a half width under 100 meV that had a homogeneous planar electron emission as the nonequilibrium reaction field. In particular, ZnO particles synthesized by electron beam irradiation show selective crystal bridging along the c-axis during FE electron beam irradiation, which is important for synthesizing poly-ZnO crystals without a heating process, because the energy fluctuations of FE electron beams are small and affect the directionality of ZnO crystal growth along the c-axis. This accomplishment may make a significant contribution to the analysis of the formation mechanism of ZnO particles with a uniform morphology and crystal structure by the FE electron beam during the crystallization. Moreover, we will be able to provide basic elements for next-generation nanodevices with highly functional properties by controlling each terminal crystal interface of metals, ceramics, and semiconductors with this technique.

中文翻译：

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通过电子束辐照作为非平衡反应场的ZnO晶粒的非热和选择性晶体桥连

期望将陶瓷颗粒，例如氧化钛和氧化铟锡用作各种应用的电或催化材料。在这项工作中，我们逐步将电子束辐照用作陶瓷组合物的非平衡反应场，并成功获得了使用低能量分辨率的场发射（FE）电子束制造陶瓷薄膜的基本技术。具有在100meV以下的半宽度的，具有均一的平面电子发射作为非平衡反应场的电子。尤其是，通过电子束辐照合成的ZnO颗粒在FE电子束辐照期间显示出沿c轴的选择性晶体桥接，这对于不经加热处理合成多ZnO晶体很重要，因为FE电子束的能量波动很小，并且会影响ZnO晶体沿c轴生长的方向性。这一成就可能对在结晶过程中通过FE电子束分析具有均匀形态和晶体结构的ZnO颗粒的形成机理做出重大贡献。此外，通过使用该技术控制金属，陶瓷和半导体的每个末端晶体界面，我们将能够为具有高性能功能的下一代纳米器件提供基本元件。这一成就可能对在结晶过程中通过FE电子束分析具有均匀形态和晶体结构的ZnO颗粒的形成机理做出重大贡献。此外，通过使用该技术控制金属，陶瓷和半导体的每个末端晶体界面，我们将能够为具有高性能功能的下一代纳米器件提供基本元件。这一成就可能对在结晶过程中通过FE电子束分析具有均匀形态和晶体结构的ZnO颗粒的形成机理做出重大贡献。此外，通过使用该技术控制金属，陶瓷和半导体的每个末端晶体界面，我们将能够为具有高性能功能的下一代纳米器件提供基本元件。