The effect of high hydrostatic pressure up to 12 kbar on the electrical resistivity in the basal ab plane of an optimally doped Y_0.77Pr_0.23Ba₂Cu₃O_7−δ single crystal was studied. An inhomogeneity of the sample is found that does not depend on the applied pressure, P. The T_c(P) dependence increases nonlinearly with increasing P, and the value of the baric derivative, dT_c/dP, decreases. Possible mechanisms of the effect of high pressure on T_c are discussed, taking into account the presence of features in the electronic spectrum of charge carriers.

中文翻译：

---

简短说明：高达12 kbar的静水压力对Y0.77Pr0.23Ba2Cu3O7-δ单晶电阻的影响

研究了高达12 kbar的高静水压力对最佳掺杂Y _0.77 Pr _0.23 Ba ₂ Cu ₃ O7 _-δ单晶的基础ab平面中电阻率的影响。样品的不均匀性发现，不依赖于所施加的压力，P。所述Ť _Ç（P非线性随）依赖性的增加P，和气压的导数的值，的dT _ç / DP，减小。高压影响T _c的可能机制 考虑到电荷载流子的电子频谱中特征的存在，进行了讨论。