We report on the electrical detection of electron nuclear double resonance (EDENDOR) through spin-dependent tunneling transport in an amorphous hydrogenated silicon thin film. EDENDOR offers a many orders of magnitude improvement over classical ENDOR and is exclusively sensitive to paramagnetic defects involved in electronic transport. We observe hyperfine interactions with ¹H nuclei very close to silicon dangling bond defects. These observations substantially extend recent EDENDOR observations involving silicon vacancy defects and ¹⁴N hyperfine interactions with fairly distant nitrogen atoms in 4H-SiC bipolar junction transistors. We have improved the detection scheme utilized in the earlier study by combining magnetic field modulation with RF amplitude modulation; this combination significantly improves the operation of the automatic power leveling scheme and the overall sensitivity.

中文翻译：

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非晶态氢化硅薄膜中电检测到的电子核双共振的观察

我们报告通过自旋依赖性隧穿运输在非晶态氢化硅薄膜中的电子核双共振（EDENDOR）的电检测。与经典ENDOR相比，EDENDOR的性能提高了多个数量级，并且对电子传输中涉及的顺磁缺陷非常敏感。我们观察到与¹ H原子核非常接近硅悬键缺陷的超精细相互作用。这些观察结果大大扩展了最近的EDENDOR观察结果，其中涉及硅空位缺陷和¹⁴在4H-SiC双极结型晶体管中，N与相当远的氮原子之间的超精细相互作用。通过将磁场调制与RF幅度调制相结合，我们改进了早期研究中使用的检测方案。这种结合大大改善了自动功率均衡方案的操作和整体灵敏度。