For ferroelectric random access memory (FRAM) with ${\text{HfO}}_2$-based materials, the wake-up effect and the imprint have to be limited. Here, the electrical behavior of different samples is investigated during retention tests on woken-up samples at room temperature. Retention properties are compared during tests with or without alternations of voltage pulses with opposite signs. First, during retention tests with alternations, the imprint oscillates between two values that are believed to be too high for the reading operation of industrial FRAM memories. This imprint oscillation is not the sole cause of remanent polarization loss. Second, the wake-up effect and retention loss appear to be closely linked. Finally, two retention fitting models are tested: the first one follows a power law $t^{-n}$ and the second one corresponds to a stretched exponential behavior $\exp (-{\left(t/\tau \right)}^{\beta })$. The data cannot be fitted by the power law at all, while the stretched exponential can fit the data after $t>100\hspace{0.17em}\mathrm{s}$. In fact, the stretched exponential model highlights that the remanent polarization reduction during retention tests can be separated into at least two parts: a behavior for a short period of elapsed time and a behavior after a long period of elapsed time. The origins of this two-part remanent polarization loss behavior are discussed.

中文翻译：

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基于HfO2的FRAM保留测试期间的印记问题：工业挑战？

对于具有以下特性的铁电随机存取存储器（FRAM）： ${\text{f}}_{\mathrm{2个}}$基材料，唤醒效果和烙印必须受到限制。在这里，在室温下对唤醒的样品进行保留测试期间，研究了不同样品的电性能。在测试过程中比较具有或不具有相反符号的电压脉冲时的保持性能。首先，在交替进行保留测试期间，压印在两个值之间振荡，这两个值被认为对于工业FRAM存储器的读取操作而言过高。这种压印振荡不是剩余极化损耗的唯一原因。其次，唤醒效果和保留损耗似乎密切相关。最后，测试了两个固位拟合模型：第一个遵循幂定律${Ť}^{-ñ}$ 第二个对应于扩展的指数行为 $\mathrm{经验值}（-{\left(Ť/\tau \right)}^{\beta }）$。幂定律完全无法拟合数据，而扩展的指数可以在幂之后拟合数据$Ť>100\hspace{0.17em}\mathrm{s}$。实际上，拉伸指数模型突出表明，保留测试期间剩余的极化减少可以分为至少两个部分：短时间流逝的行为和长时间流逝的行为。讨论了这种由两部分组成的剩余极化损耗行为的起源。