Crystallographic characterization and the ferroelectric properties of 50 nm-thick sputter-deposited Al_0.78Sc_0.22N films deposited at room temperature (RT) and 400 °C are investigated. c-axis oriented growths were confirmed by x-ray diffraction patterns with rocking curve measurements for both samples. Al_0.78Sc_0.22N films were found to grow in the c-axis direction and showed poling-free ferroelectric properties, which are advantageous for practical memory and piezoelectric applications. Although the metal-ferroelectric-metal (MFM) capacitors represent low switching cycle endurance, MFM capacitors revealed remnant polarization (P_r) of 70 μC/cm² and 113 μC/cm² for RT- and 400 °C-deposited samples, respectively. Ferroelectric films with low-temperature process capability can open a wide range of applications.

中文翻译：

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反应溅射法在室温下沉积无极化铁电AlScN膜

研究了在室温（RT）和400°C下沉积的50 nm厚溅射Al _0.78 Sc _0.22 N薄膜的晶体学特征和铁电性能。通过X射线衍射图样和两个样品的摇摆曲线测量证实了c轴取向的生长。发现Al _0.78 Sc _0.22 N膜在c轴方向上生长并显示出无极化铁电特性，这对于实际的存储和压电应用是有利的。尽管金属铁电金属（MFM）电容器的开关周期耐久性很低，但MFM电容器的剩余极化强度（P _r）为70μC / cm ²和113 μ C /厘米²分别用于RT-400℃沉积的样本，。具有低温处理能力的铁电薄膜可以打开广泛的应用领域。