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Unconventional anomalous Hall effect in magnetic topological insulator MnBi4Te7device
Applied Physics Letters ( IF 4 ) Pub Date : 2021-02-22 , DOI: 10.1063/5.0041532
Bin Jia 1 , Shuai Zhang 1 , Zhe Ying 1 , Hangkai Xie 1 , Bo Chen 1 , Muhammad Naveed 1 , Fucong Fei 1 , Minhao Zhang 1 , Danfeng Pan 2 , Fengqi Song 1
Affiliation  

The natural intrinsic magnetic topological insulator MnBi2Te4(Bi2Te3)n is a platform for studying intriguing transport phenomena and provides an essential chance for the fundamental understanding of the combination of magnetism and topology. Here, we fabricated MnBi4Te7 thin film devices and carried out the transport measurement. It shows the unconventional anomalous Hall effect in the devices with the hysteresis anomaly and hump-like behavior. The gate-controlled sign reversal is also an interesting feature. With the modulation of gate voltage and temperature, we suggest that the unconventional anomalous Hall effect is due to the coexistence of the antiferromagnetic component and ferromagnetic component, which may result from the inhomogeneous spatial variation. Our work provides a resourceful insight into the study of the material family.

中文翻译:

磁拓扑绝缘子MnBi4Te7器件中的非常规异常霍尔效应

天然本征磁性拓扑绝缘子MnBi 2 Te 4(Bi 2 Te 3n是研究引人入胜的传输现象的平台,并且为基本了解磁性和拓扑学组合提供了重要的机会。在这里,我们制造了MnBi 4 Te 7薄膜器件并进行了传输测量。它显示了具有磁滞异常和驼峰状行为的设备中的非常规异常霍尔效应。门控符号反转也是一个有趣的功能。通过对栅极电压和温度的调制,我们提出非常规的异常霍尔效应是由于反铁磁分量和铁磁分量的共存所致,这可能是由于空间变化不均匀而引起的。我们的工作为对物质家族的研究提供了丰富的见识。
更新日期:2021-02-26
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