We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV⁻) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV⁻ centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to the formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHIs preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi-1D registers with an average qubit spacing of a few nanometers and of order 100 color centers per micrometer along 10 to 30-μm-long percolation chains.

中文翻译：

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沿快速重离子轨迹在掺氮金刚石中直接形成氮空位中心

我们报告氮空位的深度分辨的测量的光致发光（NV ^- ）沿着晶体生长期间已被掺杂有100ppm的氮中的Ib型合成单晶金刚石快重离子（SHIS）的轨迹形成的中心。的光谱显示分析认为NV ^-中心优先在电子停止过程占主导的区域内形成，而不是在离子范围的末端形成，在该范围内弹性碰撞会导致形成空位和缺陷。在高空位密度的区域中，热退火进一步优先提高了SHI的辐射后的NV产量。沿单个快速重离子的轨迹形成的NV中心可以通过提升技术进行隔离，以探索准1D寄存器中色中心qubit，平均qubit间隔为几纳米，每微米100个色中心，沿10到10。 30- μ米长的渗滤链。