Cu incorporated ZnS-PVA thin films at different concentration of Cu (0.5, 1, 5, 10 and 15% by volume) have been synthesized by solvent casting followed by thermolysis technique. X- Ray diffraction (XRD) studies revealed that the as-prepared thin films are nanocrystalline and possesses cubic phase with preferred orientation along (111) plane. The XRD peak intensity of the films decreases significantly at high Cu concentration. The lattice strain estimated through Williamson-Hall plot, increases with increase of Cu concentration. Scanning Electron Microscope images indicate homogeneous and continuous surface morphology of 5% Cu incorporated ZnS-PVA thin films. However, at high percentage of Cu the surface roughness increases with the formation of elongated shaped particles of average length ~650 nm. Optical band gap decreases from 3.72 to 2.80 eV with increase of Cu concentration. The room temperature electrical resistivity of the films is of the order of 10⁸ Ωcm.

通过溶剂浇铸和热解技术合成了不同浓度的Cu（0.5、1、5、10和15％（体积））的掺Cu的ZnS-PVA薄膜。X射线衍射（XRD）研究表明，所制备的薄膜是纳米晶体，并具有沿（111）面具有优选取向的立方相。膜的XRD峰强度在高Cu浓度下显着降低。通过Williamson-Hall图估算的晶格应变随Cu浓度的增加而增加。扫描电子显微镜图像表明5％Cu掺入的ZnS-PVA薄膜具有均匀且连续的表面形态。然而，在高百分比的铜下，表面粗糙度会随着平均长度〜650 nm的细长形状颗粒的形成而增加。光学带隙从3.72降低至2。随着铜浓度的增加达到80 eV。薄膜的室温电阻率约为10⁸欧姆厘米。