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Ternary CuO:SnO2:ZnO (1:1:1) composite thin film for room temperature gas sensor application
Optik ( IF 3.1 ) Pub Date : 2021-02-26 , DOI: 10.1016/j.ijleo.2021.166615
S.R. Cynthia , R. Sivakumar , C. Sanjeeviraja

The present work reports the good sensing characteristics of ternary CuO:SnO2:ZnO (1:1:1) thin films prepared by radio frequency magnetron sputtering technique towards the detection of NH3 gas. The crystalline nature of the films was observed after annealing the films at 1000 °C. A remarkable variation was observed in the surface morphology (tiny spherical particle, hexagon and cauliflower shaped structure) of the films due to sputtering power/annealing temperature. The existence of Cu2+, Sn4+ and Zn2+ states in the films was confirmed by X-ray photoelectron spectroscopy. The highest optical transmittance of 87 % was obtained in the visible region. A decrease in energy band gap with increasing sputtering power may be due to the formation of localised state near the band edges of the film. The as-deposited and annealed (1000 °C) films showed an excellent sensitivity towards ammonia (NH3) at room temperature. The annealed film showed a highest response of 2057 towards 100 ppm of NH3. Interestingly, the annealed film is able sense the NH3 gas even from 5 ppm concentration onwards. The films also showed an excellent operational stability and repeatability with appropriate response/recovery time. Based on the results, it may be stated that the CuO:SnO2:ZnO (1:1:1) films can function as a most suitable ternary metal oxide in the detection of NH3 at room temperature.



中文翻译:

用于室温气体传感器的三元CuO:SnO 2:ZnO(1:1:1)复合薄膜

本工作报道了通过射频磁控溅射技术制备的三元CuO:SnO 2:ZnO(1:1:1)薄膜对NH 3气体的良好传感特性。在将膜在1000℃下退火之后,观察到膜的晶体性质。由于溅射功率/退火温度,在膜的表面形态(微小的球形颗粒,六边形和花椰菜形状的结构)中观察到显着的变化。Cu 2 +,Sn 4+和Zn 2+的存在膜中的状态通过X射线光电子能谱确认。在可见光区域获得了最高的透光率87%。随着溅射功率的增加,能带隙的减小可能是由于在膜的带边缘附近形成了局部状态。沉积和退火(1000°C)的薄膜在室温下对氨(NH 3)表现出极好的敏感性。退火后的薄膜对100 ppm NH 3的响应最高为2057 。有趣的是,即使从5 ppm浓度开始,退火膜也能检测到NH 3气体。该膜还显示出出色的操作稳定性和可重复性,并具有适当的响应/恢复时间。根据结果​​,可以说CuO:SnO2:ZnO(1:1:1)膜可在室温下检测NH 3时,充当最合适的三元金属氧化物。

更新日期:2021-03-02
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