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Sb2S3 surface modification for improved photoelectrochemical water splitting performance of BiVO4 photoanode
Journal of Photonics for Energy ( IF 1.7 ) Pub Date : 2021-02-01 , DOI: 10.1117/1.jpe.11.016502
Yumeng Lu 1 , Zhiqiang Wang 1 , Jinzhan Su 1
Affiliation  

A fabrication of Sb2S3 layer as surface modification on pyramidal BiVO4 film is realized to improve photoelectrochemical (PEC) performance of BiVO4 photoanode. The Sb2S3-modified BiVO4 film exhibits an increased photocurrent density of 1.1 mA / cm2 at 1.23 V versus reversible hydrogen electrode and a negative shift of onset potential. Further, the negative shift of flat band potential demonstrates that the role of Sb2S3 surface modification is to suppress surface recombination, and thus increased surface separation and hole transfer efficiency are also achieved for the Sb2S3-modified BiVO4 photoanode. Accordingly, the Sb2S3 surface modification enhances surface water oxidation kinetics for the BiVO4 photoanode, resulting in improved PEC performance. These findings inspire further application of Sb2S3 into a PEC water splitting system.

中文翻译:

Sb 2 S 3表面改性可改善BiVO 4光电阳极的光电化学水分解性能

实现了金字塔形BiVO4薄膜表面改性的Sb2S3层的制备,以提高BiVO4光电阳极的光电化学性能。与可逆氢电极相比,经Sb2S3改性的BiVO4膜在1.23 V电压下显示出1.1 mA / cm2的增加的光电流密度,并且起始电位发生负向偏移。此外,平带电势的负移表明,Sb2S3表面改性的作用是抑制表面重组,因此,对于Sb2S3改性的BiVO4光电阳极,还可实现更高的表面分离度和空穴传输效率。因此,Sb2S3表面改性增强了BiVO4光电阳极的表面水氧化动力学,从而提高了PEC性能。这些发现激发了Sb2S3在PEC水分解系统中的进一步应用。
更新日期:2021-02-25
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