Ionizing radiation has the potential to cause operational disruptions and destroy microelectronic devices. This paper introduces and demonstrates a method of hardening microelectronic devices for sustained use in applications where exposure to ionizing radiation exists. By incorporating quantum structures below active regions of devices, gettering of charges created by ionizing radiation becomes possible. The gettering of electrons and holes forces recombination of carriers, thus eliminating photocurrent surges and trap filling which would otherwise disrupt device operation. Experimental results discussed here show a reduction in photocurrent of over two orders of magnitude when utilizing energy band engineering to create quantum structures for charge gettering. In this work, a nitride-based high electron mobility two-dimensional electron gas demonstrates the method. However, the theory utilized pertains not only to nitride-based devices, but transfers to other materials as well.

中文翻译：

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通过量子吸气技术在电离辐射环境中对硬化电子器件进行能带工程

电离辐射有可能导致操作中断并破坏微电子设备。本文介绍并演示了一种硬化微电子器件的方法，该方法可在存在电离辐射的应用中持续使用。通过将量子结构并入器件的有源区域之下，可以吸收由于电离辐射产生的电荷。电子和空穴的吸收会迫使载流子重新结合，从而消除了光电流浪涌和陷阱填充，否则会干扰器件的运行。这里讨论的实验结果表明，当利用能带工程创建用于吸杂电荷的量子结构时，光电流降低了两个数量级。在这项工作中，氮化物基高电子迁移率二维电子气证明了该方法。但是，所采用的理论不仅适用于氮化物基器件，而且还适用于其他材料。