Edge contact between two-dimensional materials and metal can achieve small contact resistance because of strong interaction. In this work, we study the electronic properties of in-plane black phosphorus (BP) based heterojunctions with graphene (Gra) and boropheneβ₁₂ (Boroβ₁₂) electrodes using first principle calculations. The small Schottky barrier along zigzag direction of BP is shown in Gra/BP/Gra and Boroβ₁₂/BP/Boroβ₁₂ heterojunctions because of the anisotropy of BP. The applied strain can modulate both the electron barrier and the hole barrier for armchair BP based heterojunction. In addition, we find that electric field not only can modulate the height of the Schottky barrier effectively but also the type of Schottky contact of Gra/BP/Gra and Boroβ₁₂/BP/Boroβ₁₂ structures. The results suggest a promising way to design tunable Schottky diodes based on Gra/BP/Gra and Boroβ₁₂/BP/Boroβ₁₂ heterojunctions through modulating the electric field.

二维材料和金属之间的边缘接触由于相互作用强，可以实现较小的接触电阻。在这项工作中，我们与石墨烯（GRA）和boropheneβ研究面内黑磷（BP）基于异质结的电子特性₁₂（Boroβ ₁₂ ），使用第一原理计算的电极。沿BP的之字形方向上的小的肖特基势垒在GRA / BP / GRA和Boroβ所示₁₂ / BP /Boroβ ₁₂异质结，因为BP的各向异性。施加的应变可以调制基于扶手椅BP的异质结的电子势垒和空穴势垒。此外，我们发现，电场不仅能有效地调节肖特基势垒的高度，但也GRA / BP / GRA和Boroβ的肖特基接触的类型，₁₂ / BP /Boroβ _12层的结构。结果表明有希望的方式来设计基于GRA / BP / GRA和Boroβ可调肖特基二极管₁₂ / BP /Boroβ _12个异质结通过调制所述电场。