In this paper, we study theoretically both dynamical and static charge susceptibilities of zigzag boron-nitride nanotube due to the effects of electron-phonon interaction. One can find the plasmonic oscillation modes of the system using the imaginary part of the dynamical charge susceptibility function. For this purpose, we implement Green's function approach in the context of the Holstein model Hamiltonian. According to the linear response theory, the charge response function will be obtained by calculating the correlation function of charge density-density operators. We also exploit the random phase approximation in order to correct the charge susceptibility due to the electron-phonon interaction. In addition, we present the static charge structure factor which can be a criterion for charge ordering of the system. Especially the effect of electron-phonon coupling, gap parameter, chemical potential, next-to-nearest-neighbor hopping amplitude, and tube diameter on the plasmonic modes of the system. The results indicate a change in the intensity, frequency position of sharp peaks, and the number of those in the imaginary part of the dynamical charge susceptibility function of zigzag boron-nitride nanotube system. Finally, the temperature behavior of the static charge structure factor of zigzag boron-nitride nanotube is studied and the effect of the mentioned parameters on this function has been investigated.

在本文中，我们从理论上研究了由于电子-声子相互作用的影响，Z字形氮化硼硼纳米管的动态和静态磁化率。人们可以利用动态电荷敏感性函数的虚部找到系统的等离子体振荡模式。为此，我们在Holstein模型哈密顿量的环境中实现格林函数方法。根据线性响应理论，将通过计算电荷密度-密度算符的相关函数来获得电荷响应函数。我们还利用随机相位近似来校正由于电子-声子相互作用引起的电荷敏感性。此外，我们介绍了静电荷结构因子，它可以作为系统电荷排序的标准。特别是电子-声子耦合，间隙参数，化学势，近邻跳频幅度和管径对系统等离子波模的影响。结果表明，之字形氮化硼纳米管系统的动态电荷敏感性函数的强度，尖峰的频率位置以及虚部中的数量发生了变化。最后，研究了锯齿形氮化硼硼纳米管的静电荷结构因子的温度行为，并研究了上述参数对该函数的影响。以及之字形氮化硼硼纳米管系统的动态电荷敏感性函数的虚部中的数目。最后，研究了锯齿形氮化硼硼纳米管的静电荷结构因子的温度行为，并研究了上述参数对该函数的影响。以及之字形氮化硼硼纳米管系统的动态电荷敏感性函数的虚部中的数目。最后，研究了锯齿形氮化硼硼纳米管的静电荷结构因子的温度行为，并研究了上述参数对该函数的影响。