Luminescence and structural properties of Pr³⁺ doped HfSiO_x thin layer elaborated by magnetron sputtering have been investigated as a function of the annealing temperature. The emission properties of Pr³⁺ ions were studied using photoluminescence (PL) and cathodoluminescence (CL) spectroscopies. Phase separation between amorphous SiO₂ and crystallized HfO₂ nano-grains occurring in the HfSiO_x matrix has been investigated by atom probe tomography and transmission electron microscopy with particular consideration for the Pr distribution. Both PL and CL measurements evidenced a strong emission originating from Pr³⁺ ions in the visible range for an annealing temperature higher than 950°C. At 950°C, Pr³⁺ ions are clearly located in HfO₂ nano-grains of cubic structure. Regarding PL, no significant changes are observed between 950°C and 1050°C. However, CL measurements revealed new emission peaks in the infrared range after an annealing at 1050°C, corresponding to the appearance of a new orthorhombic crystalline structure of HfO₂ nano-grains in the thin layer. The CL signal evolution as a function of the annealing treatment is discussed in regard to the evolution of structural properties.

研究了通过磁控溅射制备的掺Pr ^3+的HfSiO _x薄层的发光和结构性质与退火温度的关系。使用光致发光（PL）和阴极发光（CL）光谱学研究了Pr ³⁺离子的发射性质。已经通过原子探针层析成像和透射电子显微镜研究了在HfSiO _x基质中出现的非晶SiO ₂和结晶的HfO ₂纳米颗粒之间的相分离，特别考虑了Pr的分布。PL和CL测量均证明源自Pr ³⁺的强发射在高于950°C的退火温度下可见光范围内的离子。在950°C下，Pr ³⁺离子明显位于立方结构的HfO ₂纳米颗粒中。关于PL，在950℃至1050℃之间未观察到显着变化。但是，CL测量显示在1050°C退火后，在红外范围内出现了新的发射峰，这与薄层中HfO ₂纳米晶粒新的正交晶体结构的出现相对应。关于结构特性的演变，讨论了作为退火处理的函数的CL信号的演变。