Stress-induced mechanism and related manifold characteristics from lattice mismatch and harsh self-heating effect (SHE) substantially interact are major concerns of advanced strained Ge p-FinFETs with inherent poor thermal conductivity. This study presents a process-oriented simulation methodology to investigate the comprehensive influences composed of the stress amplitude and performance variations induced by SHE and lattice stresses. Device performance can be separately improving by 15.98% and 31.20% when lattice strain and subsequent SHE are introduced. In conclusion, the effect of SHE on the performance of advanced p-FinFET is explored and found tantamount to the stress contribution of the lattice mismatch.

由晶格失配和苛刻的自热效应（SHE）引起的应力诱导机理和相关的歧管特性基本相互作用，是具有固有的低导热性的先进应变Ge p-FinFET的主要关注点。这项研究提出了一种面向过程的仿真方法，以研究由SHE和晶格应力引起的应力幅度和性能变化的综合影响。当引入晶格应变和随后的SHE时，器件性能可以分别提高15.98％和31.20％。总之，探索了SHE对先进p-FinFET性能的影响，发现其与晶格失配的应力贡献无异。