The electron-doped cuprates are usually characterized by a more robust antiferromagnetic phase and a much narrower superconducting (SC) dome than those of the hole-doped counterparts. Recently, bulk single crystals of ${\text{Pr}}_{1.3-x}{\text{La}}_{0.7}{\text{Ce}}_x{\text{CuO}}_{4-\delta }$ (PLCCO) prepared by the protect annealing method have been studied extensively and revealed many intriguing properties that were different from those obtained from samples annealed by the conventional methods. Here we report on a systematic angle-resolved photoemission spectroscopy study of PLCCO single crystals after protect annealing. The results indicate that the actual electron concentration ($n_{\text{FS}}$) estimated from the Fermi-surface area is significantly larger than the Ce concentration $x$ and the new $n_{\text{FS}}$-based SC dome of PLCCO is more extended towards the overdoped side than the $x$-based SC dome derived for samples prepared using the conventional annealing method.

中文翻译：

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通过保护退火方法制备的掺杂电子的铜酸盐的角分辨光发射光谱法揭示了扩展的超导圆顶

掺杂电子的铜酸盐通常具有比掺杂空穴的铜酸盐更坚固的反铁磁相和更窄的超导（SC）穹顶的特征。最近，散装单晶${\text{镨}}_{1.3-X}{\text{啦}}_{0.7}{\text{铈}}_X{\text{氧化铜}}_{4-\delta }$通过保护退火方法制备的（PLCCO）已被广泛研究，并且揭示了许多有趣的性质，这些性质不同于通过常规方法退火的样品获得的性质。在这里，我们报告了保护退火后PLCCO单晶的系统角度分辨光发射光谱研究。结果表明，实际电子浓度（${ñ}_{\text{FS}}$由费米表面积估算的）明显大于铈的浓度 $X$ 和新的 ${ñ}_{\text{FS}}$PLCCO的基于SC的SC穹顶向着超掺杂侧延伸得比 $X$基于SC的圆顶，适用于使用常规退火方法制备的样品。