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Intensity-tunable terahertz radiation from tin selenide
Journal of Luminescence ( IF 3.6 ) Pub Date : 2021-02-24 , DOI: 10.1016/j.jlumin.2021.118008
Qi Song , Hao Chen , Min Zhang , Jinde Yin , Junbo Yang , Bo Zhang , Peiguang Yan

Recently, the active controlled broadband terahertz (THz) emitter from semiconductor crystal has attracted considerable attention due to its field intensity tuning properties, which makes it a promising candidate for wide applications in THz photonics. A broadband THz wave radiation intensity by applying electric field control in an n-type semiconductor tin selenide (SnSe2) crystal had been reported. In addition, due to the weak phonon absorption of the material in the THz band, the resulting THz spectral range is up to 3.5 THz. With an applied voltage of −5 V, the actively modulated depth of THz intensity is up to 123%. Our work directly demonstrates that when the excited laser photon energy exceeds the material bandgap, photon drag effect would be the main mechanism of THz wave radiation rather than nonlinear effects. Owing to simple structure and high modulation depth, electrically controlled THz radiation, the SnSe2 crystal has great applications in generation and modulation devices in THz region.



中文翻译:

硒化锡的强度可调太赫兹辐射

最近,半导体晶体的有源受控宽带太赫兹(THz)发射器由于其场强调谐特性而备受关注,这使其成为THz光子学中广泛应用的有希望的候选者。通过在n型半导体硒化锡(SnSe 2)晶体已有报道。另外,由于材料在太赫兹频带中对声子的吸收较弱,因此产生的太赫兹光谱范围高达3.5太赫兹。在-5 V的施加电压下,THz强度的主动调制深度高达123%。我们的工作直接证明,当激发的激光光子能量超过材料带隙时,光子拖曳效应将是太赫兹波辐射的主要机理,而不是非线性效应。由于结构简单,调制深度高,电控太赫兹辐射,SnSe 2晶体在太赫兹区域的发电和调制装置中具有广阔的应用前景。

更新日期:2021-02-28
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