An optimized doping process is used to achieve extremely-low threshold voltage (ELVT) FinFETs for low-power mmWave applications based on 12nm node technology platform. With the $V_{TH}\approx 100$ mV ELVT FinFET shows 15% $I_{EFF}$ improvement at the same $V_{DD}$ compared to its super-low threshold voltage (SLVT) counterpart, while mismatch and reliability performances are comparable. $F_{T}/F_{MAX}$ of ~305GHz/~315GHz and comparable Maximum Stable Gain ( MSG ) to SLVT FinFET gives ELVT FinFET an advantage for mmWave 5G low-power applications. Local oscillator (LO) chain blocks are investigated as a circuit level example to confirm the benefits of ELVT FinFET. An optimized LO transmission Line (TL) driver using ELVT FinFETs results in ~9% and ~8% reduction in $V_{DD}$ and power consumption respectively at the same phase-noise (PN) level as the SLVT based design. If operated at the same $V_{DD}$ of 0.525V ELVT FinFET can improve the VCO Figure of Merit ( $FOM_{VCO}$ ) by ~2.8dB.

中文翻译：

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用于5G mmWave应用的极低阈值电压FinFET

针对基于12nm节点技术平台的低功耗mmWave应用，采用了优化的掺杂工艺来实现极低的阈值电压（ELVT）FinFET。随着 $ V_ {TH} \约100 $ mV ELVT FinFET显示15％ $ I_ {EFF} $ 同时改善 $ V_ {DD} $ 与它的超低阈值电压（SLVT）相比，失配和可靠性能可比。 $ F_ {T} / F_ {MAX} $ 〜305GHz /〜315GHz和相当的最大稳定增益（ 味精 ）SLVT FinFET使ELVT FinFET在mmWave 5G低功耗应用中具有优势。研究本地振荡器（LO）链块作为电路级示例，以确认ELVT FinFET的优势。使用ELVT FinFET的经过优化的LO传输线（TL）驱动器可将功耗降低约9％和8％ $ V_ {DD} $ 功耗和功耗分别与基于SLVT的设计处于相同的相位噪声（PN）级别。如果同时操作 $ V_ {DD} $ 0.525V ELVT FinFET可改善VCO品质因数（ $ FOM_ {VCO} $ ）〜2.8dB。