Oxide semiconductors are of particular interest in the field of integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with high linearity based on the unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) based on a-SIZO exhibits maximum mobility of 9.8 cm ² /Vs at $\text{V}_{\mathrm{ D}}$ of 5 V, high on/off ratio of $\sim 10^{6}$ , and stable threshold voltage ( $\text{V}_{\mathrm{ Th}}$ ) of −0.35 V. Additionally, the optical properties of the proposed FET include excellent $\text{V}_{\mathrm{ Th}}$ shift and photocurrent ( $\text{I}_{\mathrm{ photo}}$ ) with high linearity under various red-light illumination. The proposed enhancement-load type inverter device shows reliable electrical and optical characteristics with an inverter gain of 0.7 at $\text{V}_{\mathrm{ DD}}$ of 1 V and linear photo-response in terms of inverter gain and voltage shift, demonstrating promising potential in the field of integrated electronics for optoelectronic applications.

中文翻译：

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超线性和高灵敏度的光感应单极逆变器

氧化物半导体由于其大面积制造，高均匀性和优越的性能而在集成电子领域特别受关注。在这里，我们报告了一种基于单极性n型沟道材料非晶硅铟锌氧化物（a-SIZO）的具有高线性度的异常灵敏的光感应逆变器设备。基于a-SIZO的场效应晶体管（FET）的最大迁移率在9.8 cm ² / Vs $ \ text {V} _ {\ mathrm {D}} $ 5 V的高开/关比 $ \ sim 10 ^ {6} $ 以及稳定的阈值电压（ $ \ text {V} _ {\ mathrm {Th}} $ ）-0.35V。此外，拟议的FET的光学特性包括出色的 $ \ text {V} _ {\ mathrm {Th}} $ 位移和光电流（ $ \ text {I} _ {\ mathrm {photo}} $ ）在各种红光照明下具有高线性度。所提出的增强负载型逆变器设备具有可靠的电气和光学特性，逆变器增益为0.7 $ \ text {V} _ {\ mathrm {DD}} $ 在逆变器增益和电压漂移方面具有1 V的线性响应和线性光响应，这证明了在光电应用集成电子领域的潜力。