This article presents the optimization of a one-transistor active pixel sensor (1T-APS), known as the photoelectron in-situ sensing device (PISD) built in a fully-depleted silicon-on-insulator (FD-SOI) substrate. By employing TCAD simulation, we develop a physics-based model and systematically investigate the impact of six key parameters – gate oxide thickness, buried oxide layer, top Si layer, gate length, length of active region, and substrate doping – on the device’s sensitivity and sensing range. Our comprehensive study provides guidance on the design of the PISD with the highest performance.

中文翻译：

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光电子的优化 原位 FD-SOI中的传感装置

本文介绍了一种称为光电子的单晶体管有源像素传感器（1T-APS）的优化 原位感应器（PISD）内置在完全耗尽的绝缘体上硅（FD-SOI）基板中。通过使用TCAD仿真，我们建立了一个基于物理的模型，并系统地研究了六个关键参数-栅极氧化层厚度，掩埋氧化层，顶部Si层，栅极长度，有源区长度和衬底掺杂-对器件灵敏度的影响和感应范围。我们的综合研究为性能最高的PISD设计提供了指导。