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In-situ low-temperature synthesis of PS-ZrO2 hybrid films and their characterization for high-k gate dielectric application
Progress in Organic Coatings ( IF 6.6 ) Pub Date : 2021-02-22 , DOI: 10.1016/j.porgcoat.2021.106188
Diana Sánchez-Ahumada , Libia Judith Verastica-Ward , Martín Orozco , Diana Vargas-Hernández , Andrés Castro-Beltrán , Rafael Ramirez-Bon , Clemente Guadalupe Alvarado-Beltrán

We report a novel high-k hybrid material synthesized at low temperature using a simple sol-gel derived method compatible with organic large-area application. The homogeneous cross-linked organic-inorganic dielectric film is achieved by solution process and densified at 100 °C. For the synthesis, styrene and zirconium isopropoxide are used as polystyrene and ZrO2 source, respectively. Also, the 3-trimetoxy-silyl-propyl-methacrylate was used as a coupling agent to link organic and inorganic phases. The hybrid films were deposited by dip coating and densified in-situ by polymerization and polycondensation of the organic and inorganic components. The hybrid materials were analyzed by FTIR, XPS, and TGA measurements to confirm the formation of the cross-linked hybrid material. Optical T and R spectroscopy, AFM, and SEM images demonstrated their optical properties, smooth surface, thickness, and high-quality films. The dielectric constant of 9.2 and leakage current around 10−7 A/cm2 was determined by analyzing the MIM capacitors electrical response, fabricated with the hybrid films as the insulator layer.



中文翻译:

PS-ZrO 2杂化膜的原位低温合成及其在高k栅介质应用中的表征

我们报告了一种新型的高k杂化材料,该材料在低温下使用与有机大面积应用兼容的简单溶胶-凝胶衍生方法合成。均质的交联有机-无机介电薄膜通过固溶工艺获得,并在100°C下致密化。对于合成,苯乙烯和异丙醇锆用作聚苯乙烯和ZrO 2来源。另外,使用3-三甲氧基-甲硅烷基-丙基-甲基丙烯酸酯作为偶联剂来连接有机相和无机相。通过浸涂沉积杂化膜,并通过有机和无机组分的聚合和缩聚原位致密化。通过FTIR,XPS和TGA测量分析杂化材料,以确认交联杂化材料的形成。光学T和R光谱,AFM和SEM图像证明了它们的光学特性,光滑的表面,厚度和高质量的薄膜。通过分析以混合膜作为绝缘层制造的MIM电容器的电响应,可以确定介电常数9.2和泄漏电流约为10 -7 A / cm 2

更新日期:2021-02-23
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