We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the $1.1–1.55\mu \mathrm{m}$ range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.

中文翻译：

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硅中近红外单光子发射器的多样性

我们报告检测到属于七个不同光学活性点缺陷家族的硅中的单个发射极。这些荧光中心是通过对通常用于集成光子学的商用绝缘体上硅晶片进行碳注入而产生的。单光子发射在$1.1–1.55\mu \mathrm{米}$范围，涵盖O和C电信频段。我们分析了它们在10 K时的光致发光光谱，偶极发射和光学弛豫动力学。对于一个特定的族，我们在从10 K到远高于77 K液氮温度的温度下显示出恒定的发射强度。考虑到对纳米制造和硅集成的先进控制，这些单个的人造原子是有前途的系统，可用于研究基于硅的量子技术。