Physical Review Letters ( IF 8.385 ) Pub Date : 2021-02-22 , DOI: 10.1103/physrevlett.126.083602
A. Durand; Y. Baron; W. Redjem; T. Herzig; A. Benali; S. Pezzagna; J. Meijer; A. Yu. Kuznetsov; J.-M. Gérard; I. Robert-Philip; M. Abbarchi; V. Jacques; G. Cassabois; A. Dréau

We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the $1.1–1.55\text{\hspace{0.17em}}\text{\hspace{0.17em}}\mu \mathrm{m}$ range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.

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