当前位置: X-MOL 学术Math. Comput. Model. Dyn. Syst. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Parameter extraction and modelling of the MOS transistor by an equivalent resistance
Mathematical and Computer Modelling of Dynamical Systems ( IF 1.9 ) Pub Date : 2021-02-22 , DOI: 10.1080/13873954.2020.1857790
Sherif M. Sharroush 1 , Yasser S. Abdalla 2
Affiliation  

ABSTRACT

During the analysis of multi-transistor circuits, the need arises to evaluate the time delay or the power consumption of the circuit. Due to the complexity of the transistor model, several complicated equations arise from which a compact-form solution cannot be obtained and a suitable physical insight cannot be drawn. With this regard, two contributions are presented in this paper. The first one is a fully analytical parameter extraction approach to be applied on the MOS transistors. The second one is a quantitative method for simplifying the analysis of MOS circuits by modelling the MOS transistor by a suitable equivalent resistance adopting the time-delay or the power-consumption equivalence criteria. The parameter-extraction method is verified by using the extracted parameters in the derived expressions according to the second contribution. Compared to other representations, the agreement of the proposed model with the simulation results is very good.



中文翻译:

用等效电阻对MOS晶体管进行参数提取和建模

摘要

在分析多晶体管电路的过程中,需要评估电路的时间延迟或功耗。由于晶体管模型的复杂性,出现了几个复杂的方程式,从这些方程式无法获得紧凑形式的解决方案,并且无法得出适当的物理见解。在这方面,本文提出了两个建议。第一种是将完全分析参数提取方法应用于MOS晶体管。第二种方法是一种定量方法,通过采用适当的等效电阻(采用时间延迟或功耗等效标准)对MOS晶体管进行建模,从而简化了MOS电路的分析。根据第二贡献,通过在导出的表达式中使用提取的参数来验证参数提取方法。

更新日期:2021-02-22
down
wechat
bug