The energy spectrum of deep impurity centers in wide-bandgap semiconductors (E_g > 2 eV) of mesoscopic sizes R ⪢ λ_D, where λ_D is the de Broglie wavelength, at which the spectrum of free (uncoupled) charge carriers is not quantized, but the surface significantly affects physical processes in the bulk, has been theoretically considered. It has been shown that the binding energy of an electron on an impurity center near the surface of the crystal tends to zero. In this case, the wavefunction of the electron of the impurity center located in the surface region is delocalized; i.e., the energy of the impurity electron lies in the conduction band. The possible effect of such an energy overlap on effects observed in wide-bandgap mesoscopic semiconductors is discussed.

的深杂质中心的宽带隙半导体（能谱ë_克> 2 eV）的介观尺寸的ř ⪢λ _d，其中λ _d从理论上考虑了de Broglie波长，在该波长下未量化自由（未耦合）载流子的光谱，但表面会显着影响本体中的物理过程。已经表明，电子在晶体表面附近的杂质中心上的结合能趋于零。在这种情况下，位于表面区域的杂质中心的电子的波函数离域；即，杂质电子的能量在导带中。讨论了这种能量重叠对在宽带隙介观半导体中观察到的影响的可能影响。