Carbon doped two-dimensional (2D) hexagonal boron nitride nanosheets (BNNSs) are obtained through a CO₂—pulsed laser deposition (CO₂—PLD) technique on silicon dioxide (SiO₂) or molybdenum (Mo) substrates, showing - stable hysteresis characteristics over a wide range of temperatures, which makes them a promising candidate for materials based on non-volatile memory devices. This innovative material with electronic properties of n-type characterized in the form of back-to-back Schottky diodes appears to have special features that can enhance the device performance and data retention due to its functional properties, thermal-mechanical stability, and its relation with resistive switching phenomena. It can also be used to eliminate sneak current in resistive random-access memory devices in a crossbar array. In this sense constitutes a good alternative to design two series of resistance-switching Schottky barrier models in the gold/BNNS/gold and gold/BNNS/molybdenum structures; thus, symmetrical and non-symmetrical characteristics are shown at low and high bias voltages as indicated by the electrical current-voltage (I–V) curves. On the one hand, the charge recombination caused by thermionic emission does not significantly change the rectification characteristics of the diode, only its hysteresis properties change due to the increase in external voltage in the Schottky junctions. The addition of carbon to BNNSs creates boron vacancies that exhibit partially ionic character, which also helps to enhance its electrical properties at the metal-BNNS-metal interface.

通过在二氧化硅（SiO ₂）上的CO ₂脉冲激光沉积（CO ₂ -PLD）技术获得碳掺杂的二维（2D）六方氮化硼纳米片（BNNSs）。）或钼（Mo）基板，在很宽的温度范围内均显示出稳定的磁滞特性，这使其成为基于非易失性存储器件的材料的有希望的候选者。这种具有n型电子特性的创新材料以背对背的肖特基二极管为特征，由于其功能特性，热机械稳定性及其相互关系，似乎具有特殊的功能，可以增强器件的性能和数据保持能力。带有电阻切换现象。它也可用于消除交叉开关阵列中的电阻型随机存取存储设备中的潜电流。从这个意义上讲，它是设计金/ BNNS /金和金/ BNNS /钼结构中的两个电阻切换肖特基势垒模型的好选择。因此，如电流-电压（IV）曲线所示，在低偏置电压和高偏置电压下均显示出对称和非对称特性。一方面，由热电子发射引起的电荷复合不会显着改变二极管的整流特性，只是其滞后特性会由于肖特基结中外部电压的增加而改变。向BNNS中添加碳会产生显示出部分离子特征的硼空位，这也有助于增强其在金属-BNNS-金属界面上的电性能。由于肖特基结中外部电压的增加，仅其磁滞特性会发生变化。向BNNS中添加碳会产生显示出部分离子特征的硼空位，这也有助于增强其在金属-BNNS-金属界面处的电性能。由于肖特基结中外部电压的增加，仅其磁滞特性会发生变化。向BNNS中添加碳会产生显示出部分离子特征的硼空位，这也有助于增强其在金属-BNNS-金属界面上的电性能。