For the first time, Tb³⁺ and Sm³⁺ ions co-doped into semiconductor ZnS quantum dots (QDs) were successfully synthesized by a wet chemical method. The presence of Tb³⁺ and Sm³⁺ ions in ZnS QDs was verified by X-ray photoelectron spectroscopy (XPS). X-ray diffraction (XRD) and UV–visible absorption spectra analyses revealed that the as-synthesized QDs had a zinc blende (ZB) structure with a particle size of about 3–4 nm. The optical properties of Sm³⁺ ions in ZnS QDs were studied through the excitation, photoluminescence (PL) spectroscopy, and PL-decay lifetime by using the Judd-Ofelt (J-O) theory. The luminescent quenching phenomenon of Sm³⁺ was observed when its concentration was higher than a specified value. For the ZnS QDs co-doped Tb³⁺ and Sm³⁺, the luminescent intensity of Sm³⁺ ions was enhanced because of the energy transfer (ET) process from Tb³⁺ ions to Sm³⁺ ions. The main interaction mechanism for the Tb³⁺-Sm³⁺ and Sm³⁺-Sm³⁺ energy transfer processes was determined by using the Inokuti-Hirayama (I–H) model.

首次通过湿化学方法成功合成了共掺杂到半导体ZnS量子点（QDs）中的Tb ³⁺和Sm ³⁺离子。通过X射线光电子能谱（XPS）验证了ZnS QD中Tb ³⁺和Sm ³⁺离子的存在。X射线衍射（XRD）和紫外可见吸收光谱分析表明，合成后的量子点具有锌混合（ZB）结构，粒径约为3-4 nm。利用Judd-Ofelt（JO）理论通过激发，光致发光（PL）光谱和PL衰变寿命研究了ZnS量子点中Sm ³⁺离子的光学性质。Sm ³⁺的发光猝灭现象当其浓度高于规定值时观察到。对于共掺杂的Tb ³⁺和Sm ³⁺的ZnS QD ，由于从Tb ³⁺离子到Sm ³⁺离子的能量转移（ET）过程，Sm ³⁺离子的发光强度得到增强。为Tb的主要作用机理³⁺ -Sm ³⁺和Sm ³⁺ -Sm ³⁺的能量转移过程通过使用Inokuti-平山（I-H）模型来确定。