Abstract

Using high-vacuum magnetron sputtering, epitaxial Dy films were synthesized on Nb and Ta buffer layers on single-crystal Al₂O₃ substrates with different crystallographic orientations. It was established that the epitaxial relationships [11\(\bar {2}\)0]Al₂O₃|| [011]Nb(Ta) and [1\(\bar {1}\)02]Al₂O₃||[011]Nb(Ta) are satisfied with growing a Nb(Ta) buffer layer on single-crystal sapphire substrates with different crystallographic orientations. The second relationship has never been observed up to now; this may be because the growth rates upon magnetron sputtering are approximately two orders higher than those upon molecular-beam epitaxy. It was established that the Dy crystal lattice expansion in the basal plane by 2.8–3% occurs in all cases. Contrary to the samples grown on Nb, the Dy films grown on the Ta buffer layers are characterized by a larger value of the saturation magnetization, whereas its maximum value is attained in the polycrystalline Dy films.

中文翻译：

---

在不同晶体取向的Al 2 O 3衬底上生长的Dy薄膜的磁性

摘要

使用高真空磁控溅射，在具有不同晶体学取向的单晶Al ₂ O ₃衬底上的Nb和Ta缓冲层上合成了外延Dy膜。已确定外延关系[11 \（\ bar {2} \） 0] Al ₂ O ₃ || [011] Nb（Ta）和[1 \（\ bar {1} \） 02] Al ₂ O ₃|| [011]通过在具有不同晶体学取向的单晶蓝宝石衬底上生长Nb（Ta）缓冲层，可以满足Nb（Ta）的要求。到目前为止，还没有观察到第二种关系。这可能是因为磁控溅射时的生长速率比分子束外延时的生长速率高大约两个数量级。可以确定，在所有情况下，Dy晶格在基面上的膨胀都为2.8-3％。与在Nb上生长的样品相反，在Ta缓冲层上生长的Dy膜的特点是饱和磁化强度较大，而在多晶Dy膜中则达到最大值。