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OEE improvement by pogo pin defect detection in wafer probing process
Microsystem Technologies ( IF 2.1 ) Pub Date : 2021-02-20 , DOI: 10.1007/s00542-020-05189-7
Woonyoung Yeo , Yung-Chia Chang , Wayne Liu

It is usually very difficult to find the causes of low yield performance in semiconductor manufacturing. In a typical wafer probing process, when the yield is low, engineers are required to examine both the equipment and the products to clarify if the low yield performance could be contributed by the testing conditions or the products. No matter which were the main cause, the time-consuming trouble-shooting process itself demanded resources thus the overall equipment effectiveness (OEE) is also damaged. This paper dealt with the trouble shooting data of wafer probing process. By examining the main factors that may affect the yield and equipment downtime in the wafer probing process, this study conducted various experiments to explore the relationship between yield and various wafer probing settings such as cleaning sheet size, probing overdrive, touch down time, and contact resistance. As a results, the optimal conditions of the main factors for improving yield and OEE are presented.



中文翻译:

通过晶圆探测过程中的Pogo Pin缺陷检测来改善OEE

通常很难找到半导体制造中低良率性能的原因。在典型的晶圆探测过程中,当成品率低时,要求工程师检查设备和产品,以阐明测试条件或产品是否会导致低成品率性能。不管是哪个主要原因,耗时的故障排除过程本身都需要资源,因此,整个设备效率(OEE)也受到损害。本文讨论了晶片探测过程中的故障排除数据。通过研究可能影响晶圆探测过程中良率和设备停机时间的主要因素,本研究进行了各种实验,以探索良率与各种晶圆探测设置之间的关系,例如清洁片材尺寸,探测超速驱动,着陆时间和接触电阻。结果,提出了提高产量和OEE的主要因素的最佳条件。

更新日期:2021-02-21
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