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Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-02-19 , DOI: 10.35848/1882-0786/abe41f
Motoya Shinozaki 1 , Yui Muto 1 , Takahito Kitada 1 , Takashi Nakajima 2 , Matthieu R. Delbecq 2 , Jun Yoneda 2 , Kenta Takeda 2 , Akito Noiri 2 , Takumi Ito 2 , Arne Ludwig 3 , Andreas D. Wieck 3 , Seigo Tarucha 2 , Tomohiro Otsuka 1, 2, 4, 5
Affiliation  

We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.



中文翻译:

砷化镓量子点射频反射法中噪声分布的栅极电压依赖性

我们在使用砷化镓量子点的高速射频反射测量中研究电读出噪声的栅极电压依赖性。来自实时测量的快速傅立叶变换频谱反映了内置的器件噪声和电路噪声,包括谐振器和放大器。我们通过模型分析来分离它们的噪声频谱分量。详细研究了栅极电压对闪烁噪声的依赖性,并将其与电荷传感器的灵敏度进行了比较。我们指出,读出噪声的主要成分随测量积分时间而变化。

更新日期:2021-02-19
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