Series connection of multiple transistors is an attractive solution to achieve higher voltage capability. However, the voltage imbalance among the series-connected devices is a critical issue caused by mismatches of device characteristics and gate signals. To prevent the failure of devices from the voltage imbalance, voltage balancing control (VBC) is required. In this work, an active VBC for series-connected silicon carbide (SiC) mosfet submodules is proposed with a pulsewidth modulation (PWM) method. A submodule consists of two switches and one shunt capacitor, and the PWM method actively controls the capacitor voltages for balancing. The proposed VBC is simulated in MATLAB/Simulink and experimentally verified with six series-connected SiC mosfet submodules at up to 150 kHz. The voltage balancing is achieved within 3.9% of the targeted balanced voltage.

中文翻译：

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使用脉宽调制的串联SiC MOSFET子模块的有源电压平衡

多个晶体管的串联是实现更高电压能力的一种有吸引力的解决方案。但是，串联连接的器件之间的电压不平衡是由器件特性和栅极信号不匹配引起的关键问题。为了防止设备因电压不平衡而发生故障，需要使用电压平衡控制（VBC）。在这项工作中，用于串联碳化硅（SiC）的有源VBCmosfet子模块采用脉宽调制（PWM）方法提出。一个子模块由两个开关和一个并联电容器组成，PWM方法主动控制电容器电压以实现平衡。拟议的VBC在MATLAB / Simulink中进行了仿真，并通过六个串联的SiC进行了实验验证mosfet子模块的最高频率为150 kHz。达到目标平衡电压的3.9％以内的电压平衡。