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Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD
International Journal of Photoenergy ( IF 3.2 ) Pub Date : 2021-02-19 , DOI: 10.1155/2021/8842975
Marwa S. Salem 1, 2 , Omar M. Saif 3 , Ahmed Shaker 4 , Mohamed Abouelatta 5 , Abdullah J. Alzahrani 1 , Adwan Alanazi 1 , M. K. Elsaid 5 , Rabie A. Ramadan 1, 6
Affiliation  

In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: , , , and the conversion efficiency () equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are , , , and . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.

中文翻译:

使用SILVACO TCAD优化InGaP / GaAs双结太阳能电池的性能

在这项工作中,提出了InGaP / GaAs双结(DJ)太阳能电池性能的优化。首先,提供了基于GaAs隧道二极管的DJ太阳能电池的设计。其次,用InGaP / GaAs DJ太阳能电池的最新实验结果对使用过的设备模拟器进行校准。之后,对顶部窗口层的两种不同材料AlGaAs和AlGaInP进行DJ太阳能电池性能的优化。对于AlGaAs,对以下各项进行了优化:铝(Al)摩尔分数,顶部窗口厚度,顶部基础厚度以及底部BSF掺杂和厚度。提取优化电池的电性能参数: 转换效率(等于36.71%。通过使用AlGaInP作为顶部电池窗口,优化电池的电性能参数为 因此,与最近的文献结果相比,发现AlGaInP是InGaP / GaAs DJ电池顶部窗口层的最佳材料,因为在300 K的标准AM1.5G太阳光谱的1个太阳下,AlGaInP的转换效率提高了4%。所有优化步骤和仿真结果均使用SLVACO TCAD工具执行。
更新日期:2021-02-19
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