By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped β-Ga₂O₃ films grown using metal-organic vapor phase epitaxy. High-magnetic field (H) Hall effect measurements (–90 kOe ≤ H ≤ +90 kOe) showed non-linear Hall resistance for T < 150 K, revealing two-band conduction. Further analyses revealed carrier freeze out characteristics in both bands yielding donor state energies of ∼33.7 and ∼45.6 meV. The former is consistent with the donor energy of Si in β-Ga₂O₃, whereas the latter suggests a residual donor state. This study provides critical insight into the impurity band conduction and the defect energy states in β-Ga₂O₃ using high-field magnetotransport measurements.

中文翻译：

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掺Si的β-Ga2O3薄膜中的杂质带导通

通过结合温度相关的电阻率和霍尔效应测量，我们研究了使用金属有机气相外延生长的Si掺杂的β - Ga ₂ O ₃薄膜中的施主态能。高磁场（H ^）的霍尔效应测量结果（-90千奥斯特≤ ħ ≤90千奥斯特）显示非线性霍尔对于T <150kΩ电阻，露出两波段传导。进一步的分析表明，两个频带中的载流子都具有冻结特性，产生的供体态能量约为33.7和45.6 meV。前者与β- Ga ₂ O ₃中Si的施主能一致，而后者则暗示了残留的供体状态。这项研究使用高场磁传输测量方法对β- Ga ₂ O _3中的杂质带传导和缺陷能态提供了重要的见识。