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Recent Developments in Semipolar InGaN Laser Diodes
Semiconductors ( IF 0.7 ) Pub Date : 2021-02-19 , DOI: 10.1134/s106378262102010x
Aparna Das

Abstract

Group III-nitride semiconductors (GaN, AlN, and InN) are attractive materials for a wide range of electronic and photonic applications. The most widely employed growth plane for III-nitrides is the polar plane, characterized by the presence of a polarization-induced internal electric field in heterostructures. To eliminate the deleterious effects of polarization, III-nitride devices grown on nonpolar and semipolar orientations have become a major area of research. In addition to the reduction in the polarization-induced internal electric field, semipolar orientations potentially offer the possibility of higher indium incorporation, which is necessary for the emission of light in the visible range and is the preferred growth orientation for green/yellow light-emitting diodes and lasers. This review presents the recent progress on the development of semipolar InGaN quantum well laser diodes. The developments of laser diodes in three different semipolar planes such as (11–22), (20–21), and (20–2–1) planes are discussed including the bright prospects of group III-nitrides.



中文翻译:

半极性InGaN激光二极管的最新发展

摘要

III族氮化物半导体(GaN,AlN和InN)是广泛的电子和光子应用中有吸引力的材料。III型氮化物使用最广泛的生长平面是极性平面,其特征在于异质结构中存在极化诱导的内部电场。为了消除极化的有害影响,在非极性和半极性取向上生长的III族氮化物器件已成为研究的主要领域。除了减少极化引起的内部电场外,半极性取向还可能提供更高的铟掺入率,这对于发射可见光范围内的光是必需的,并且是绿色/黄色发光的首选生长取向。二极管和激光器。这篇综述介绍了半极性InGaN量子阱激光二极管的最新进展。讨论了激光二极管在(11–22),(20–21)和(20–2–1)平面等三个不同的半极性平面中的发展,包括III族氮化物的光明前景。

更新日期:2021-02-19
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