Abstract

Radiation-induced effects in Cu(In,Ga)Se₂ alloy thin films after implantation with hydrogen ions with energies of 2.5, 5, and 10 keV and a dose of ~3 × 10¹⁵ cm^–2 are studied. Comparative analysis of the optical characteristics of nonimplanted and hydrogen-implanted Cu(In,Ga)Se₂ films is conducted on the basis of photoluminescence spectra and luminescence-excitation spectra recorded at liquid-helium temperature (~4.2 K). The band gap determined for Cu(In,Ga)Se₂ alloys by mathematical processing of the luminescence-excitation spectra is ~1.171 eV. In the photoluminescence spectra of nonimplanted and hydrogen-implanted Cu(In,Ga)Se₂ films, an intense band is detected, with a maximum at ~1.089 eV. The band is defined by the recombination of free electrons with holes localized in the valence-band tails. It is established that broad bands with maximums at the energies 0.92 and ~0.77 eV are defined by the radiative recombination of nonequilibrium charge carriers at deep energy levels of ion-induced acceptor defects formed in the band gap of Cu(In,Ga)Se₂ alloys. The conditions for the effect of the ion passivation of dangling electron bonds at the surface and in the bulk of polycrystalline Cu(In,Ga)Se₂ films and the nature of structural point defects and the mechanisms of radiative recombination are discussed.

中文翻译：

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Cu（In，Ga）Se 2合金薄膜中离子诱导缺陷的辐射复合

摘要

研究了以2.5、5和10 keV能量和〜3×10 ¹⁵ cm ^–2的能量注入氢离子后，Cu（In，Ga）Se ₂合金薄膜中的辐射诱导效应。基于液氦温度（〜4.2 K）下记录的光致发光光谱和发光激发光谱，对未注入和氢注入的Cu（In，Ga）Se ₂薄膜的光学特性进行了比较分析。通过发光激发光谱的数学处理确定的Cu（In，Ga）Se ₂合金的带隙为〜1.171 eV。在未注入和氢注入的Cu（In，Ga）Se ₂的光致发光光谱中在电影中，检测到一个强烈的带，最大值在〜1.089 eV。该带由自由电子与价带尾部中的空穴的复合定义。已确定，在Cu（In，Ga）Se ₂的带隙中形成的离子诱导受体缺陷的深能级下，非平衡电荷载流子的辐射复合定义了在能量0.92和〜0.77 eV处具有最大值的宽带。合金。讨论了在表面多晶Cu（In，Ga）Se ₂薄膜中和表面上悬空电子键的离子钝化作用的条件，结构点缺陷的性质以及辐射复合的机理。