Abstract

The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative feedback between the emission intensity and carrier heating by this emission. The main parameter of this duration excess is the characteristic carrier cooling time slowed down due to carrier heating by emission. The effect of this time on renormalization of the band gap due to the Coulomb interaction of carriers is also noted. The part of the concept of the picosecond dynamics of the intense stimulated emission of GaAs, which has been obtained to date in our works with co-authors, is given in Conclusions.

中文翻译：

---

GaAs皮秒激发发射对载热的影响对发射持续时间的影响

摘要

比较了高功率皮秒光泵浦和GaAs薄层固有激发皮秒发射的实时测量包络。基于在发射强度和由该发射引起的载流子加热之间的负反馈来解释超过泵浦持续时间的发射持续时间。该持续时间过量的主要参数是特征性载流子冷却时间，这是由于载流子因发射而发热而减慢了。还指出了由于载流子的库仑相互作用，该时间对带隙重新归一化的影响。结论中给出了迄今为止在与合作者的合作中获得的GaAs强烈激发发射的皮秒动力学概念的一部分。