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Giant Magnetoresistance in a Metal–Organic Semiconductor–Metal Structure
Semiconductors ( IF 0.7 ) Pub Date : 2021-02-19 , DOI: 10.1134/s1063782621020184 A. A. Lachinov , D. D. Karamov , A. N. Lachinov
中文翻译:
金属-有机半导体-金属结构中的巨磁阻
更新日期:2021-02-19
Semiconductors ( IF 0.7 ) Pub Date : 2021-02-19 , DOI: 10.1134/s1063782621020184 A. A. Lachinov , D. D. Karamov , A. N. Lachinov
Abstract
The article presents the results of investigation of the giant magnetoresistance effect in a magnetic metal–organic semiconductor–non-magnetic metal structure with a magnetoresistive coefficient of ~2600%. The influence of a magnetic field on the concentration and mobility of charge carriers and the ferromagnetic–polymer potential barrier is studied. The possibility of theoretical interpretation of the investigated phenomenon based on a recently proposed model, which takes into account the effect of a hyperfine field on spin-dependent carrier hopping along the polymer chain, is considered.
中文翻译:
金属-有机半导体-金属结构中的巨磁阻
摘要
本文介绍了磁阻系数约为2600%的磁性金属-有机半导体-非磁性金属结构中巨磁阻效应的研究结果。研究了磁场对电荷载流子浓度和迁移率以及铁磁聚合物势垒的影响。考虑了基于最近提出的模型对研究现象进行理论解释的可能性,该模型考虑了超精细场对沿聚合物链自旋相关的载流子跳跃的影响。