当前位置: X-MOL 学术Semiconductors › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Giant Magnetoresistance in a Metal–Organic Semiconductor–Metal Structure
Semiconductors ( IF 0.7 ) Pub Date : 2021-02-19 , DOI: 10.1134/s1063782621020184
A. A. Lachinov , D. D. Karamov , A. N. Lachinov

Abstract

The article presents the results of investigation of the giant magnetoresistance effect in a magnetic metal–organic semiconductor–non-magnetic metal structure with a magnetoresistive coefficient of ~2600%. The influence of a magnetic field on the concentration and mobility of charge carriers and the ferromagnetic–polymer potential barrier is studied. The possibility of theoretical interpretation of the investigated phenomenon based on a recently proposed model, which takes into account the effect of a hyperfine field on spin-dependent carrier hopping along the polymer chain, is considered.



中文翻译:

金属-有机半导体-金属结构中的巨磁阻

摘要

本文介绍了磁阻系数约为2600%的磁性金属-有机半导体-非磁性金属结构中巨磁阻效应的研究结果。研究了磁场对电荷载流子浓度和迁移率以及铁磁聚合物势垒的影响。考虑了基于最近提出的模型对研究现象进行理论解释的可能性,该模型考虑了超精细场对沿聚合物链自旋相关的载流子跳跃的影响。

更新日期:2021-02-19
down
wechat
bug