The key objective of this study is to check out the performance of two multilayer processed double-heterojunction pHEMTs with different gate width as well as one conventional single-heterojunction HEMT. Different types of investigation have been undertaken by means of on-wafer DC, small-signal, and nonlinear two-tone measurements. The modeling of the DC output characteristics was successfully accomplished using the FET's Curtice model for all of three tested devices. The main figures of merit for microwave and millimeter wave applications have been determined from scattering parameter measurements and then discussed in detail. Furthermore, to attain a better insight of the device behavior, the nonlinear intermodulation distortion behavior has been also studied and compared for the three devices over different bias conditions. A careful analysis of the DC and RF characteristics over a wide range of working conditions is necessary to ensure adequate transistor operation, depending on the given application of interest.

中文翻译：

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GaAs HEMT 技术的基于测量的分析：多层 DH 假晶 HEMT 与传统 SH HEMT

本研究的主要目的是检查两个具有不同栅极宽度的多层处理双异质结 pHEMT 以及一个传统的单异质结 HEMT 的性能。已经通过晶圆上 DC、小信号和非线性双音测量进行了不同类型的研究。使用 FET 的 Curtice 模型为所有三个测试设备成功完成了直流输出特性的建模。微波和毫米波应用的主要品质因数由散射参数测量确定，然后详细讨论。此外，为了更好地了解器件行为，还研究并比较了三种器件在不同偏置条件下的非线性互调失真行为。