The photonic crystals based semiconductor quantum dots have revealed auspicious characteristics for the optoelectronic devices. The most difficult way to achieve lasing lies in the creation of sufficient nonradiated Auger recombination’s process. Therefore, there is a real demand to enhance the lasing efficiency, either by increasing the concentration of quantum dots or through the improving of the optical gain or optimizing the optical waveguide. In this article, Pb_1-xEu_xSe photonic QDs have been prepared via polymethoxyethylhexyloxyphenylenevinylene assisted polyol technique for improving the quantum yield and amplify the photonic gains. The XRD inspects the cubic phase of the Pb_1-xEu_xSe photonic QDs. The TEM reveals the increasing of the sizes of these QDS from 2.2 nm to 8.1 nm due to the doping of Eu-atoms. The Eu-dopant decreased bandgaps of PbSe nanocrystals from 1.56 eV to 1.32 eV because of the creation of sublevels within the PbSe badgap. The emission spectra revealed the amplification of photonic gains which resulted in the increase of emitted photons intensity by 35 time and the increase of sharpness of the spectral bandwidth by 4 times. The quantum yield improved to 88 %. The amplified optoelectronic gain and high quantum efficiency renders the Pb_1-xEu_xSe photonic QDs to be used for IR-imaging and optical communications application.

基于光子晶体的半导体量子点已显示出光电子器件的吉祥特征。实现激光发射的最困难方法是创建足够的非辐射俄歇复合过程。因此，确实存在通过增加量子点的浓度或通过提高光学增益或优化光波导来提高激光发射效率的需求。在本文中，通过聚甲氧_基乙基己_基氧基苯撑亚乙烯基辅助的多元醇技术制备了Pb _1-x Eu _x Se光子量子点，以提高量子产率并放大光子增益。XRD检查Pb _1-x Eu _x的立方相硒光子量子点。TEM显示，由于Eu原子的掺杂，这些QDS的尺寸从2.2 nm增加到8.1 nm。Eu-掺杂剂将PbSe纳米晶体的带隙从1.56 eV降低到1.32 eV，这是因为在PbSe缺陷间隙中创建了子能级。发射光谱揭示了光子增益的放大，这导致发射光子强度增加了35倍，光谱带宽的清晰度增加了4倍。量子产率提高到88％。放大的光电增益和高量子效率使Pb _1-x Eu _x Se光子QD可以用于IR成像和光通信应用。