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Twisted-motion substrate with sustained azimuthal rotation effect on the growth of AZO thin films by rf-sputtering
Optik ( IF 3.1 ) Pub Date : 2021-02-17 , DOI: 10.1016/j.ijleo.2021.166561
L.G. Daza , I.V. Perez-Quintana , B. Cruz-Muñoz , M. Herrera-Salvador , R. Castro-Rodríguez

Nanorods of aluminum doped zinc oxide films (AZO) were grown on borosilicate glass substrates using an rf-sputtering technique combining simultaneously substrate twisting motion frequency with sustained rotation. Twist-motion frequency of 0.35, 0.5, and, 0.75 Hz between 40° to -40° taking the horizontal plane as reference was adjusted. Effects of this twist-motion frequency as a function of the sustained azimuth rotation of the substrate at 15, 30, and 45 rpm were observed. The morphological, optical, and structural properties were compared between films. Well defined vertical nanorods shapes were observed. The thickness of the films is affected by both twist motion and rotation speed, and the average optical transmittance was greater than 80 % which shows that all samples have high transparencies in the visible range. The combination of these growth parameters of twist and rotation of the substrate allowed us to obtain refractive index values between 1.77 and 2.11 at a wavelength of 700 nm and an energy bandgap in the range of 3.47 and 3.63 eV. The crystallite size of the nanorods obtained was between 29 and 40 nm and the films showed a preferential orientation normal at the surface film to direction of the c-crystallographic plane (002). We report compressive stress in our samples.



中文翻译:

射频旋转溅射对AZO薄膜的生长具有持续方位旋转效应的扭曲运动基板

铝掺杂的氧化锌薄膜(AZO)的纳米棒使用RF溅射技术在硼硅酸盐玻璃基板上生长,该技术同时将基板扭曲运动频率与持续旋转结合在一起。以水平面为基准,在40°至-40°之间调整了0.35、0.5和0.75 Hz的扭曲运动频率。观察到这种扭转运动频率随基板在15、30和45 rpm下持续方位旋转的影响。比较了薄膜之间的形态,光学和结构特性。观察到明确定义的垂直纳米棒形状。膜的厚度受扭曲运动和旋转速度的影响,并且平均光学透射率大于80%,这表明所有样品在可见光范围内都具有高透明性。基板扭曲和旋转的这些生长参数的组合使我们能够在700 nm波长下获得介于1.77和2.11之间的折射率值,并且能带隙介于3.47和3.63 eV之间。所获得的纳米棒的微晶尺寸在29至40nm之间,并且所述膜在表面膜上显示出相对于c-结晶平面(002)的方向的优先取向法线。我们在样品中报告了压应力。所获得的纳米棒的微晶尺寸在29至40nm之间,并且所述膜在表面膜上显示出相对于c-结晶平面(002)的方向的优先取向法线。我们在样品中报告了压应力。所获得的纳米棒的微晶尺寸在29至40nm之间,并且所述膜在表面膜上显示出相对于c-结晶平面(002)的方向的优先取向法线。我们在样品中报告了压应力。

更新日期:2021-03-01
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