We have proposed and investigated a DUV LED device with anti-trapezoidal quaternary electron blocking layer (EBL) numerically. The simulation results show that the anti-trapezoidal quaternary EBL is a better approach for diminishing the electron overflow and boosting the hole into the active region. This improves radiative recombination, which is responsible for the significant enhancement in IQE and remarkable reduction in efficiency droop. The results reveal that the electron and hole concentration is increased by 19 % and 29 % respectively.

中文翻译：

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设计用于改善AlGaN基深紫外发光二极管内部量子效率的反梯形电子阻挡层

我们已经提出并研究了具有反梯形四元电子阻挡层（EBL）的DUV LED器件。仿真结果表明，反梯形四元EBL是减少电子溢出并增加空穴进入有源区的更好方法。这改善了辐射重组，这是IQE的显着提高和效率下降的显着降低的原因。结果表明，电子和空穴浓度分别增加了19％和29％。