In this paper, an extensive investigation of low-frequency (1/f) noise and total ionizing dose–response of junctionless accumulation mode double-gate (JAM DG) MOSFET is presented. Current–voltage (I_d–V_g) characteristics and low-frequency noise of JAM DG MOSFET are simulated at different ionized doses and compared to different gate oxide thickness and different channel doping concentrations. A significant amount of irradiation-induced threshold voltage shift and increase in low-frequency noise is observed for different gate oxide thickness and channel doping concentration. Moreover, the irradiation-induced border trap densities are also obtained at different doses. The gamma radiation model of Sentaurus TCAD is used to get the required results.

本文对无结累积模式双栅极（JAM DG）MOSFET的低频（1 / f）噪声和总电离剂量响应进行了广泛研究。电流-电压（I _d – V _g）在不同电离剂量下模拟了JAM DG MOSFET的特性和低频噪声，并将其与不同的栅极氧化物厚度和不同的沟道掺杂浓度进行了比较。对于不同的栅极氧化物厚度和沟道掺杂浓度，观察到大量的辐照引起的阈值电压偏移和低频噪声的增加。此外，还可以以不同的剂量获得辐照引起的边界陷阱密度。Sentaurus TCAD的伽马辐射模型用于获得所需的结果。