Bi₂Te₂Se is a topological insulator (TI) having conducting surface electronic states with an energy gap in the bulk electronic band structure. Such systems are promising for variety of superconducting and quantum computation related applications. In addition, TIs may possess other important bulk physical characteristics appropriate for more conventional applications which are not affected significantly by spin–orbit interaction. In this study we focus on bulk properties of Bi₂Te₂Se which are not greatly affected by the surface electronic states and therefore, by spin–orbit coupling. We have investigated elastic, mechanical, electronic, optical properties, bonding character and the electronic charge density distribution of ternary Bi₂Te₂Se to explore its feasibility for potential applications. Bi₂Te₂Se is found to be mechanically stable and elastically anisotropic. Electronic effective mass is high in the c-direction compared to that in the ab-plane. The optical constants show moderate level of variation with respect to the polarization of the electric field of the incident radiation. The optical spectra are consistent with the bulk electronic band structure and electronic density of states features. Both electronic band structure and optical constants show clear indications of a direct band gap of 0.61 eV for Bi₂Te₂Se. Bi₂Te₂Se possesses high refractive index at low photon energies in the infrared and visible region. It has low reflectivity in the ultraviolet region. Bi₂Te₂Se absorbs photons strongly in the ultraviolet energies. All these characteristics make Bi₂Te₂Se suitable for diverse class of optoelectronic device applications.

Bi ₂ Te ₂ Se是一种拓扑绝缘体（TI），具有在体电子能带结构中具有能隙的导电表面电子态。这样的系统有望用于各种超导和量子计算相关的应用。此外，TI可能具有适合更常规应用的其他重要的整体物理特性，而不受旋转轨道相互作用的重大影响。在这项研究中，我们关注Bi ₂ Te ₂ Se的整体性质，该性质不受表面电子状态的影响很大，因此不受自旋轨道耦合的影响。我们研究了三元Bi的弹性，机械，电子，光学性质，键合特性和电子电荷密度分布₂ Te ₂ Se探索其在潜在应用中的可行性。发现Bi ₂ Te ₂ Se具有机械稳定性和弹性各向异性。与a平面相比，c方向的电子有效质量较高。光学常数相对于入射辐射的电场极化表现出适度的变化。光谱与体电子带结构和态的电子密度特征一致。电子带结构和光学常数都清楚地表明Bi ₂ Te ₂ Se的直接带隙为0.61 eV 。Bi ₂ Te ₂硒在红外和可见光区域的低光子能量下具有高折射率。它在紫外线区域的反射率低。Bi ₂ Te ₂ Se在紫外线能量中强烈吸收光子。所有这些特性使Bi ₂ Te ₂ Se适合于各种类型的光电器件应用。