AlGaN/GaN high electron mobility transistors with a range of dual metal gate (DMG) lengths have been fabricated and studied. An improvement in transconductance up to 9% has been measured in the DMG devices in comparison to the conventional single metal gate devices. This is attributed to the distribution of the electric field under the gate region as a result of two gate metals. The drain induced barrier lowering is also suppressed using the sub-m DMG devices, with a drain induced barrier lowering decrease of around 50% due to a potential shielding effect in the two-dimensional electron gas channel.

中文翻译：

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具有改善的跨导和减少的短沟道效应的双金属栅极AlGaN / GaN高电子迁移率晶体管

已经制造并研究了具有双金属栅极（DMG）长度范围的AlGaN / GaN高电子迁移率晶体管。与传统的单金属栅极器件相比，DMG器件的跨导提高了9％。这归因于由于两种栅极金属而在栅极区域下方的电场分布。子栅栏也抑制了漏极引起的势垒降低。在DMG器件中，由于二维电子气通道中的潜在屏蔽效应，漏极引起的势垒降低了约50％。