For the purpose of developing In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) on a flexible substrate, low-temperature (150 C) processed hydrogenated IGZO (IGZO:H) TFTs with anodize alumina gate insulator (Al₂O₃ GI) have been developed. We found that fluorination of the Al₂O₃ GI surface significantly improves field effect mobility (μ _FE) and positive gate bias and temperature stress (PBTS) reliability of the TFTs. μ _FE of 28.8 cm² V⁻¹s⁻¹ and good PBTS reliability were obtained from the IGZO:H TFTs with a 68 nm thick fluorinated Al₂O₃ GI. X-ray photoelectron spectroscopy analysis revealed that fluorine in the AlOF _x formed at the Al₂O₃ surface played an important role in improving performance and PBTS reliability of low-temperature-processed oxide TFTs for future flexible device applications.

为了在柔性基板上开发In-Ga-Zn-O（IGZO）薄膜晶体管（TFT），经过低温（150 C）处理的氢化IGZO（IGZO：H）TFT具有阳极氧化铝栅极绝缘体（Al已开发出₂ O ₃ GI）。我们发现将Al的该氟化₂ ö ₃ GI表面显著提高场效应迁移率（μ _FE）和正的栅极偏压和TFT的温度应力（PBTS）的可靠性。μ _FE的28.8厘米² V ^-1小号^-1和从该IGZO获得良好的可靠性PBTS：用68纳米的TFTħ厚氟化的Al ₂ ö ₃GI X射线光电子能谱分析表明，在Al ₂ O ₃表面形成的AlOF _x中的氟在提高低温处理的氧化物TFT的性能和PBTS可靠性方面起着重要的作用，适用于未来的柔性器件。