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Design and Characterization of ZnSe/GeO2 Heterojunctions as Bandstop Filters and Negative Capacitance Devices
Physica Status Solidi (A) - Applications and Materials Science ( IF 2 ) Pub Date : 2021-02-17 , DOI: 10.1002/pssa.202000830
Sabah E. Algarni 1 , Atef F. Qasrawi 2, 3 , Najla M. Khusayfan 1
Affiliation  

Herein, polycrystalline films of ZnSe which are coated onto Au substrates and recoated with amorphous layers of GeO2 are used as active material to perform as bandstop filters. The stacked layers of Au/ZnSe/GeO2 are coated under pressure of 10−5 mbar. The device is characterized by X‐ray diffraction, X‐ray photoelectron, X‐ray fluorescence, and impedance spectroscopy techniques. It is observed that when the device is contacted with carbon point contacts, it exhibits resonance–antiresonance phenomena near 1.0 GHz. The Au/ZnSe/GeO2/C devices display negative capacitance effect in the frequency domain of 0.96–1.80 GHz. Analyses of the conductivity and capacitance spectra in the frequency domain of 0.01–1.80 GHz reveal the domination of conduction by quantum mechanical tunneling below 0.58 GHz and by the correlated barriers hopping above 0.58 GHz. In addition, characterizations of the impedance, reflection coefficient, return loss ( L r ) and voltage standing wave ratios ( VSWRs ) spectra of the device indicated ideal bandstop filter features. The notch frequency of the filter is 1.56 GHz. At this critical frequency, the Au/ZnSe/GeO2/C devices display ideal characteristics presented by VSWR of 1.0, L r value of 28.9 dB. These features make the Au/ZnSe/GeO2/C heterojunction devices promising for use in telecommunication technology.

中文翻译:

ZnSe / GeO2异质结作为带阻滤波器和负电容器件的设计与表征

在本文中,将涂覆在Au衬底上并再涂覆有GeO 2的非晶层的ZnSe多晶膜用作活性材料,以用作带阻滤波器。在10 -5 毫巴的压力下涂覆Au / ZnSe / GeO 2的堆叠层。该设备的特征在于X射线衍射,X射线光电子,X射线荧光和阻抗谱技术。可以观察到,当该设备与碳点触点接触时,它会在1.0 GHz附近表现出共振-反共振现象。Au / ZnSe / GeO 2/ C设备在0.96-1.80 GHz的频域中显示出负电容效应。对0.01-1.80 GHz频域中的电导率和电容谱的分析显示,在0.58 GHz以下的量子力学隧穿和在0.58 GHz以上的相关势垒跳跃引起的电导作用占主导地位。另外,阻抗,反射系数,回波损耗( 大号 [R )和电压驻波比( 驻波比 )的光谱表明理想的带阻滤波器特性。滤波器的陷波频率为1.56 GHz。在此临界频率下,Au / ZnSe / GeO 2 / C器件显示出VSWR为1.0时呈现的理想特性, 大号 [R 值为28.9 dB。这些特征使得Au / ZnSe / GeO 2 / C异质结器件有望用于电信技术。
更新日期:2021-04-20
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