In article number 1903252, Congxin Xia, Yufang Liu, Jingbo Li, Zhongming Wei, and co‐workers describe a reversible diode based on 2D InSe/GeSe van der Waals heterostructure. In the image, yellow lines decorated on the substrate, which are apparently severed but actually connected, implies the near‐broken band alignment of this diode. The diode can be effectively reversed by gate‐bias (control box) through the modulation of band alignment from staggered type to broken type. As shown in the cover image, the unique characteristics of this device are expected to be the core of a motor controller with the speed and direction modulation.

中文翻译：

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可逆整流器：基于2D InSe / GeSe异质结构且带近断带对准的可逆半波整流器（Adv。Sci。4/2021）

在从1903252开始的文章中，夏从新，刘玉芳，李静波，魏中明和他的同事描述了一种基于2D InSe / GeSe van der Waals异质结构的可逆二极管。在图像中，在基板上装饰的黄线显然已切断但实际上已连接，这表明该二极管的谱带接近断裂。通过从交错型到断线的带状调制，可以通过栅极偏置（控制盒）有效地反转二极管。如封面图像所示，该设备的独特特性有望成为具有速度和方向调制功能的电机控制器的核心。